Crystal engineering and ferroelectricity at the nanoscale in epitaxial 1D manganese oxide on silicon
نویسندگان
چکیده
A simple chemical method is developed to integrate a novel room-temperature ferroelectric Sr1+δMn8O16 hollandite-like oxide nanowire thin film in silicon technology. This original material shows piezoelectric coefficient d33 value of 22 ± 6 pC N−1.
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ژورنال
عنوان ژورنال: Nanoscale
سال: 2021
ISSN: ['2040-3372', '2040-3364']
DOI: https://doi.org/10.1039/d1nr00565k